Operation and Modeling of the MOS Transitor [Anglais] [Relié]

This review is for the third-edition (ISBN 978-0-19-517015-3) of this book. All other reviews by others prior to this review are for the second-edition (ISBN 0-19-517014-8). However, all other reviews are still applicable to the third-edition.

As other reviewers already pointed out, this is a great electrical/electronics engineering textbook. The third-edition has been extensively revised and 700-page long while the second-edition is 600-page long. I have absolutely no doubt in my mind that people who enjoyed the second-edition will also enjoy the third-edition even more and will feel that the contents of the book are up-to-date.

The mathematical requirements to understand this book are introductory differential and integral calculus. And one must be willing to sit down with a pencil and paper to derive many equations in the book. Furthermore, one must have ready access to computer with mathematical software such as MATLAB with Optimization Toolbox installed. I found myself using MATLAB commands such as "fsolve" a lot to plot the graphs that I see on the book.

This book covers only Si (silicon) bulk MOS transistors and does not cover the following MOS topics.

SOI transistors
GaAs/InP transistors
RF modeling

In my opinion, the authors intended to write a textbook, not an encyclopedia. And it becomes very clear why some topics are left out of the book as one reads through the book. The books/papers covering missing topics are listed in Bibliography section at the end of each chapter. The authors never use a term such as "It is easy to see..." and skip explanations of certain topics in the book. If a topic needs to be explained, the authors went great lengths to explain the topic. The authors are also strict about using symbols, especially Greek symbols. A symbol has the same meaning throughout the entire book. This consistent symbol usage itself is not an easy feat to achieve because I have seen in many other books that one symbol means one thing in one chapter but means completely something else in another chapter.

Finally, the authors indicate in the book that additional material and errata will be posted on the following Web site.

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I don't usually write reviews unless the book is either very poor or very good. This is one of the best books on my shelf. If you want to know the MOS transistor this is the book. Well researched, excellent explanations, excellent appendices. Other authors of technical books should use this as an example of how to write a good technical book.

I am a graduate student with main area of interest in Mixed mode design,testing and device modelling.This book was suggested to me by my proffessor.It is the book for MOSFET.I have read many books on this topic like Tyagi,Foty,massobrio etc but this books stands apart.It is a very well written book.Its progress is very logical going from two terminal device to four terminal device with very good explanation of the physics.More importantly the emphasis on the approximations made makes things clearer.....

For a person working with Mosfets it is a must......